NDB6060L Datasheet PDF - Fairchild

●The NDB6060L is a logic level N-channel enhancement-mode power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

● Low drive requirements allowing operation directly from logic drivers

● Critical DC electrical parameters specified at elevated temperature

● High density cell design for extremely low RDS (ON)