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Part Datasheet Search > IGBTs > ON Semiconductor > NGD8201ANT4G Datasheet PDF
NGD8201ANT4G
$ 0.463
NGD8201ANT4G Datasheet PDF (8 Pages)
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NGD8201ANT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Halogen Free Status
Halogen Free
Number of Positions
3 Position
Power Dissipation
125 W
Breakdown Voltage (Collector to Emitter)
440 V
Input Power (Max)
125 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
125 W

NGD8201ANT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
7.49 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NGD8201ANT4G Documents

ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
3 Pages / 0.07 MByte

NGD8201ANT4 Documents

ON Semiconductor
* DPAK Package Offers Smaller Footprint for Increased Board Space * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load * Intergrated ESD Diode Protection * Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices * Low Saturation Voltage * High Pulsed Current Capability * Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) * Pb-Free Package is Avialable
Littelfuse
Trans IGBT Chip N-CH 440V 20A 125000mW 3Pin(2+Tab) DPAK T/R
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