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NTB25P06G
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NTB25P06G Datasheet PDF (6 Pages)
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NTB25P06G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
27.5 A
Case/Package
TO-263-3
Drain to Source Resistance (on) (Rds)
65.0 mΩ
Polarity
P-Channel
Power Dissipation
120 W
Input Capacitance
1.68 nF
Gate Charge
50.0 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
27.5 A
Rise Time
72 ns
Input Capacitance (Ciss)
1680pF @25V(Vds)
Input Power (Max)
120 W
Fall Time
190 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
120 W

NTB25P06G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTB25P06G Documents

ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
21 Pages / 0.14 MByte

NTB25P06 Documents

ON Semiconductor
D2PAK-3P-CH 60V 27.5A 82mΩ
ON Semiconductor
ON SEMICONDUCTOR NTB25P06T4G MOSFET Transistor, P Channel, -27.5A, -60V, 70mohm, -10V, -2.8V
ON Semiconductor
D2PAK P-CH 60V 25A
ON Semiconductor
D2PAK P-CH 60V 27.5A
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