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NTB25P06T4
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NTB25P06T4 Datasheet PDF (6 Pages)
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NTB25P06T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-25.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
65 mΩ
Polarity
P-Channel
Power Dissipation
120 W
Drain to Source Voltage (Vds)
60.0 V
Breakdown Voltage (Drain to Source)
60 V
Breakdown Voltage (Gate to Source)
±15.0 V
Continuous Drain Current (Ids)
25.0 A
Rise Time
72 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Fall Time
190 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
120000 mW

NTB25P06T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
10.29 mm
Size-Width
9.65 mm
Size-Height
4.83 mm

NTB25P06T4 Documents

ON Semiconductor
6 Pages / 0.12 MByte
ON Semiconductor
21 Pages / 0.14 MByte

NTB25P06 Documents

ON Semiconductor
D2PAK-3P-CH 60V 27.5A 82mΩ
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ON SEMICONDUCTOR NTB25P06T4G MOSFET Transistor, P Channel, -27.5A, -60V, 70mohm, -10V, -2.8V
ON Semiconductor
D2PAK P-CH 60V 25A
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D2PAK P-CH 60V 27.5A
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