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NTD4806NA35G Datasheet PDF - ON Semiconductor

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ON Semiconductor

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MOSFETs

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NTD4806NA35G Datasheet PDF (8 Pages)

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NTD4806NA35G Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Drain to Source Resistance (on) (Rds)

6.00 mΩ

Polarity

N-Channel

Power Dissipation

2.14 W

Drain to Source Voltage (Vds)

30.0 V

Breakdown Voltage (Drain to Source)

30.0 V

Continuous Drain Current (Ids)

76.0 A

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