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NTD5865N-1G
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NTD5865N-1G Datasheet PDF (7 Pages)
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NTD5865N-1G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
4 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
14 mΩ
Power Dissipation
52 W
Threshold Voltage
2V ~ 4V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Rise Time
17 ns
Input Capacitance (Ciss)
1261pF @25V(Vds)
Input Power (Max)
52 W
Fall Time
3.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
71W (Tc)

NTD5865N-1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

NTD5865N-1G Documents

ON Semiconductor
7 Pages / 0.09 MByte
ON Semiconductor
8 Pages / 0.11 MByte
ON Semiconductor
12 Pages / 0.08 MByte

NTD5865N1 Documents

ON Semiconductor
MOSFET N-CH 60V 34A 18MOHM DPAK
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