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Part Datasheet Search > MOSFETs > ON Semiconductor > NTLJD3119CTBG Datasheet PDF
NTLJD3119CTBG
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NTLJD3119CTBG Datasheet PDF (10 Pages)
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NTLJD3119CTBG Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
WDFN-6
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.037 Ω
Polarity
N-Channel, P-Channel
Power Dissipation
2.3 W
Threshold Voltage
700 mV
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Gate to Source)
±8.00 V
Continuous Drain Current (Ids)
3.80 A, 4.60 A
Input Capacitance (Ciss)
271pF @10V(Vds)
Input Power (Max)
710 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2.3 W

NTLJD3119CTBG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2 mm
Size-Width
2 mm
Size-Height
0.75 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

NTLJD3119CTBG Documents

ON Semiconductor
10 Pages / 0.16 MByte
ON Semiconductor
12 Pages / 0.22 MByte
ON Semiconductor
9 Pages / 0.53 MByte

NTLJD3119 Documents

ON Semiconductor
Power MOSFET 20V 4.6A 65mOhm Complementary WDFN6, WDFN6 2x2, 0.65P, 3000-REEL
ON Semiconductor
Trans MOSFET N/P-CH 20V 3.8A/3.3A 6Pin WDFN T/R
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