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PHE13005,127 Datasheet PDF - We En Semiconductor

Manufacturer:

We En Semiconductor

Category:

BJTs

Case Package:

TO-220-3

Description:

TO-220AB NPN 400V 4A

Pictures:

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Documentation:

PHE13005,127 Datasheet (13 Pages)

Pinout Diagram on3 PageHot

Package Outline Dimension on10 Page

Part Numbering System on3 Page

PHE13005,127 Datasheet PDF (13 Pages)

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PHE13005,127 Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Rating

75 W

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

75 W

Breakdown Voltage (Collector to Emitter)

400 V

Continuous Collector Current

hFE Min

10 @2A, 5V

Input Power (Max)

75 W

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-65 ℃

Power Dissipation (Max)

75000 mW

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PHE13005,127 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Rail

Material

Silicon

Operating Temperature

-65℃ ~ 150℃

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PHE13005,127 Environmental

PHE13005,127 Function Overview

PHE13005,127 Documents

PHE13005,127 Datasheet

We En Semiconductor

13 Pages / 0.32 MByte

PHE13005,127 Other Datasheet PDF

We En Semiconductor

22 Pages / 0.32 MByte

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