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Part Datasheet Search > MOSFETs > Nexperia > PMZ290UNE2YL Datasheet PDF
PMZ290UNE2YL
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PMZ290UNE2YL Datasheet PDF (17 Pages)
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PMZ290UNE2YL Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-883
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.27 Ω
Power Dissipation
0.715 W
Threshold Voltage
700 mV
Input Capacitance
46 pF
Drain to Source Voltage (Vds)
20 V
Rise Time
10 ns
Input Capacitance (Ciss)
46pF @10V(Vds)
Fall Time
4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
350mW (Ta), 5.43W (Tc)

PMZ290UNE2YL Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

PMZ290UNE2YL Documents

Nexperia
17 Pages / 0.33 MByte

PMZ290UNE2 Documents

NXP
N-CH 20V 1.2A
Nexperia
MOSFET Transistor, N Channel, 1.2A, 20V, 0.27Ω, 4.5V, 700mV
Nexperia
MOSFET N-CH 20V 1.02A SOT323
NXP
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. DFN1006-3: leadless ultra small plastic package; 3 solder lands
NXP
Trans MOSFET N-CH 20V 1.2A 3Pin DFN T/R
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