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Part Datasheet Search > MOSFETs > NXP > PSMN009-100P Datasheet PDF
PSMN009-100P
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PSMN009-100P Datasheet PDF (14 Pages)
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PSMN009-100P Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
75.0 A
Case/Package
TO-220
Drain to Source Resistance (on) (Rds)
0.0075 Ω
Polarity
N-Channel
Power Dissipation
230 W
Threshold Voltage
3 V
Input Capacitance
8.25 nF
Gate Charge
156 nC
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
75.0 A
Input Capacitance (Ciss)
8250pF @25V(Vds)
Input Power (Max)
230 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃

PSMN009-100P Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃

PSMN009-100P Documents

NXP
14 Pages / 0.16 MByte

PSMN009100 Documents

NXP
TO-220AB N-CH 100V 75A
NXP
NXP PSMN009-100P MOSFET Transistor, N Channel, 75A, 100V, 7.5mohm, 10V, 3V
NXP
D2PAK N-CH 100V 75A
Nexperia
MOSFET N-CH 100V 75A TO220AB
Nexperia
MOSFET N-CH 100V 75A D2PAK
NXP
D2PAK N-CH 100V 75A
NXP
TO-247 N-CH 100V 100A
NXP
TO-247 N-CH 100V 100A
Nexperia
Trans MOSFET N-CH Si 100V 75A 3Pin(3+Tab) TO-220AB
Philips
N-channel enhancement mode field-effect transistor
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