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Part Datasheet Search > MOSFETs > NXP > PSMN057-200P,127 Datasheet PDF
PSMN057-200P,127
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PSMN057-200P,127 Datasheet PDF (14 Pages)
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PSMN057-200P,127 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Number of Channels
1 Channel
Polarity
N-CH
Power Dissipation
250W (Tc)
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
39A
Rise Time
58 ns
Input Capacitance (Ciss)
3750pF @25V(Vds)
Input Power (Max)
250 W
Fall Time
78 ns
Power Dissipation (Max)
250W (Tc)

PSMN057-200P,127 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Width
4.7 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

PSMN057-200P,127 Documents

NXP
14 Pages / 0.75 MByte
NXP
14 Pages / 0.28 MByte

PSMN057200 Documents

NXP
D2PAK N-CH 200V 39A
Nexperia
MOSFET N-CH 200V 39A D2PAK
Nexperia
MOSFET N-CH 200V 39A TO220AB
NXP
TO-220AB N-CH 200V 39A
NXP
N-channel TrenchMOS SiliconMAX standard level FET
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
NXP
TO-220AB N-CH 200V 39A
Nexperia
Power Field-Effect Transistor, 39A I(D), 200V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NXP
N-channel TrenchMOS SiliconMAX standard level FET
Philips
N-channel TrenchMOS transistor
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