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PTF080101S V1
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PTF080101S V1 Datasheet PDF (9 Pages)
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PTF080101S V1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
960 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
65.0 V
Current Rating
1 µA
Case/Package
H-32259-2
Drain to Source Voltage (Vds)
65.0 V
Continuous Drain Current (Ids)
1.00 µA
Output Power
10 W
Gain
18.5 dB
Test Current
150 mA
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
58000 mW
Voltage Rating
65 V

PTF080101S V1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape

PTF080101S V1 Documents

Infineon
9 Pages / 0.16 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
1 Pages / 0.03 MByte

PTF080101 Documents

Infineon
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHz
Infineon
FET RF 65V 960MHz H-32259-2
Infineon
IC FET RF LDMOS 10W TSSOP-10
Infineon
IC FET RF LDMOS 10W H-32259-2
Infineon
High Power RF LDMOS Field Effect Transistor 10W, 450 – 960MHz
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