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QSB363GR Datasheet PDF - ON Semiconductor

Manufacturer:

ON Semiconductor

Category:

Phototransistor

Case Package:

T-3

Description:

Phototransistor IR Chip Silicon 940nm 2Pin T-3/4 T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

QSB363GR Datasheet (6 Pages)

Package Outline Dimension on4 Page 5 Page

Part Numbering System on1 Page

QSB363GR Datasheet PDF (6 Pages)

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QSB363GR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

2 Pin

Case/Package

T-3

Number of Channels

1 Channel

Number of Positions

2 Position

Wavelength

940 nm

Viewing Angle

24°

Peak Wavelength

940 nm

Power Dissipation

0.075 W

Rise Time

15 µs

Breakdown Voltage (Collector to Emitter)

30 V

Input Power (Max)

75 mW

Fall Time

15 µs

Fall Time (Max)

15000 ns

Fall Time (Max)

15000 ns

Operating Temperature (Max)

85 ℃

Operating Temperature (Min)

-40 ℃

Power Dissipation (Max)

75 mW

View Datasheet >

QSB363GR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Material

Silicon

Size-Length

2.7 mm

Size-Width

2.2 mm

Size-Height

3 mm

Operating Temperature

-40℃ ~ 85℃ (TA)

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QSB363GR Environmental

QSB363GR Export Classifications

QSB363GR Function Overview

QSB363GR Documents

QSB363GR Datasheet

ON Semiconductor

6 Pages / 0.28 MByte

QSB363GR Other Datasheet PDF

ON Semiconductor

8 Pages / 0.4 MByte

QSB363GR Drawing Diagrams

ON Semiconductor

2 Pages / 0.06 MByte

QSB363 Documents

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QSB363GR Datasheet PDF

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QSB363GR Datasheet PDF

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Phototransistor IR Chip Silicon 940nm 2Pin T-3/4 T/R

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