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R6011KND3TL1 Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Case Package:

TO-252

Description:

Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R

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R6011KND3TL1 Datasheet PDF

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R6011KND3TL1 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

TO-252

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.34 Ω

Power Dissipation

124 W

Threshold Voltage

5 V

Drain to Source Voltage (Vds)

600 V

Rise Time

25 ns

Input Capacitance (Ciss)

740pF @25V(Vds)

Fall Time

20 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

124000 mW

R6011KND3TL1 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

R6011KND3TL1 Environmental

R6011KND3TL1 Documents

R6011KND3TL1 Other Datasheet PDF

ROHM Semiconductor

16 Pages / 1.46 MByte

R6011KND3 Documents

R6011KND3TL1 Datasheet PDF

ROHM Semiconductor

Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R

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