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Part Datasheet Search > High Voltage MOS > ROHM Semiconductor > R6030ENX Datasheet PDF
R6030ENX
$ 1.182

R6030ENX Datasheet PDF - ROHM Semiconductor

Manufacturer:
ROHM Semiconductor
Category:
High Voltage MOS
Case Package:
TO-220-3
Description:
TO-220FM N 600V 30A 0.115Ω
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Documentation:
R6030ENX Datasheet (14 Pages)
R6030ENX Datasheet PDF (14 Pages)
View Datasheet
Click page to view the detail

R6030ENX Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.115 Ω
Polarity
N-Channel
Power Dissipation
86 W
Threshold Voltage
4 V
Input Capacitance
2100 pF
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
30A
Rise Time
55 ns
Input Capacitance (Ciss)
2100pF @25V(Vds)
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
40W (Tc)
View Datasheet >

R6030ENX Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Size-Length
10.3 mm
Size-Width
4.8 mm
Size-Height
15.4 mm
Operating Temperature
150℃ (TJ)
Minimum Packing Quantity
1000
View Datasheet >

R6030ENX Documents

R6030ENX Datasheet
ROHM Semiconductor
14 Pages / 2.34 MByte
R6030ENX Other Datasheet PDF
ROHM Semiconductor
13 Pages / 0.85 MByte

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