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Part Datasheet Search > High Voltage MOS > ROHM Semiconductor > R6030ENZC8 Datasheet PDF
R6030ENZC8
$ 4.784
R6030ENZC8 Datasheet PDF (13 Pages)
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R6030ENZC8 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.115 Ω
Polarity
N-Channel
Power Dissipation
120 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
30A
Rise Time
55 ns
Input Capacitance (Ciss)
2100pF @25V(Vds)
Fall Time
60 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
120W (Tc)

R6030ENZC8 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bulk
Operating Temperature
150℃ (TJ)

R6030ENZC8 Documents

ROHM Semiconductor
13 Pages / 0.91 MByte
ROHM Semiconductor
3 Pages / 0.12 MByte

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