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Part Datasheet Search > High Voltage MOS > ROHM Semiconductor > R6030KNZC8 Datasheet PDF
R6030KNZC8
$ 1.832

R6030KNZC8 Datasheet PDF - ROHM Semiconductor

Manufacturer:
ROHM Semiconductor
Category:
High Voltage MOS
Case Package:
TO-3-3
Description:
TO-3pF N-CH 600V 30A
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Documentation:
R6030KNZC8 Datasheet (13 Pages)
R6030KNZC8 Datasheet PDF (13 Pages)
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R6030KNZC8 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-3-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.115 Ω
Polarity
N-Channel
Power Dissipation
86 W
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
30A
Rise Time
65 ns
Input Capacitance (Ciss)
2350pF @25V(Vds)
Fall Time
50 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
86W (Tc)
View Datasheet >

R6030KNZC8 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

R6030KNZC8 Documents

R6030KNZC8 Datasheet
ROHM Semiconductor
13 Pages / 2.38 MByte
R6030KNZC8 Other Datasheet PDF
ROHM Semiconductor
14 Pages / 2.39 MByte

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