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RF4E080BNTR Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

PowerUDFN-8

Description:

Trans MOSFET N-CH 30V 8A 8Pin HUML EP T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

RF4E080BNTR Datasheet (13 Pages)

RF4E080BNTR Datasheet PDF (13 Pages)

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RF4E080BNTR Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

PowerUDFN-8

Power Dissipation

2 W

Drain to Source Voltage (Vds)

30 V

Rise Time

100 ns

Input Capacitance (Ciss)

660pF @15V(Vds)

Input Power (Max)

2 W

Fall Time

7 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

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RF4E080BNTR Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

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RF4E080BNTR Environmental

RF4E080BNTR Function Overview

RF4E080BNTR Documents

RF4E080BNTR Datasheet

ROHM Semiconductor

13 Pages / 2.39 MByte

RF4E080BNTR Other Datasheet PDF

ROHM Semiconductor

13 Pages / 2.41 MByte

RF4E080 Documents

RF4E080BNTR Datasheet PDF

ROHM Semiconductor

Trans MOSFET N-CH 30V 8A 8Pin HUML EP T/R

RF4E080GNTR Datasheet PDF

ROHM Semiconductor

MOSFET N-CH 30V 8A 8-HUML

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