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RFD3055LESM9A
$ 0.429
RFD3055LESM9A Datasheet PDF (2 Pages)
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RFD3055LESM9A Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
11.0 A
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.107 Ω
Polarity
N-Channel
Power Dissipation
38 W
Threshold Voltage
3 V
Input Capacitance
350 pF
Gate Charge
9.40 nC
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±16.0 V
Continuous Drain Current (Ids)
11.0 A, 11.0 mA
Rise Time
105 ns
Input Capacitance (Ciss)
350pF @25V(Vds)
Input Power (Max)
38 W
Fall Time
39 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
38W (Tc)

RFD3055LESM9A Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

RFD3055LESM9A Documents

Fairchild
2 Pages / 0.19 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
1 Pages / 0.15 MByte
Fairchild
7 Pages / 0.87 MByte
Fairchild
1 Pages / 0.14 MByte

RFD3055LESM9 Documents

Fairchild
Trans MOSFET N-CH 60V 11A 3Pin(2+Tab) DPAK T/R
ON Semiconductor
Trans MOSFET N-CH Si 60V 11A 3Pin(2+Tab) DPAK T/R
Harris
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Intersil
Trans MOSFET N-CH 60V 11A 3Pin(2+Tab) DPAK
Harting Technology Group
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