RFP6P10 Datasheet PDF - Intersil

●These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors.

●Formerly developmental type TA09046.

●Features

●• -6A, -80V and -100V

●• rDS(ON) = 0.600Ω

●• SOA is Power Dissipation Limited

●• Nanosecond Switching Speeds

●• Linear Transfer Characteristics

●• High Input Impedance

●• Majority Carrier Device

●• Related Literature

●   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”