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RND030N20TL Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-252-3

Description:

Trans MOSFET N-CH 200V 3A 3Pin(2+Tab) CPT T/R

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RND030N20TL Datasheet PDF (13 Pages)

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RND030N20TL Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.62 Ω

Polarity

N-Channel

Power Dissipation

20 W

Threshold Voltage

5.2 V

Drain to Source Voltage (Vds)

200 V

Rise Time

13 ns

Input Capacitance (Ciss)

270pF @25V(Vds)

Fall Time

17 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

850mW (Ta), 20W (Tc)

RND030N20TL Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not For New Designs

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

RND030N20TL Environmental

RND030N20TL Function Overview

RND030N20TL Documents

RND030N20TL Other Datasheet PDF

ROHM Semiconductor

13 Pages / 0.28 MByte

RND030N20 Documents

RND030N20TL Datasheet PDF

ROHM Semiconductor

Trans MOSFET N-CH 200V 3A 3Pin(2+Tab) CPT T/R

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