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RQ3E100BNTB Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

PowerVDFN-8

Description:

HSMT N-CH 30V 10A

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RQ3E100BNTB Datasheet PDF (13 Pages)

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RQ3E100BNTB Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

PowerVDFN-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.0077 Ω

Polarity

N-Channel

Power Dissipation

2 W

Threshold Voltage

2.5 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

10A

Rise Time

28 ns

Input Capacitance (Ciss)

1100pF @15V(Vds)

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2W (Ta)

RQ3E100BNTB Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

150℃ (TJ)

RQ3E100BNTB Environmental

RQ3E100BNTB Function Overview

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13 Pages / 2.34 MByte

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