SCT20N120 Datasheet PDF - ST Microelectronics

●This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

●Key Features

● Very tight variation of on-resistance vs. temperature

● Slight variation of switching losses vs. temperature

● Very high operating temperature capability (200 °C)

● Very fast and robust intrinsic body diode

● Low capacitance

● Easy to drive