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SCT2750NYTB Datasheet PDF - ROHM Semiconductor

Manufacturer:

ROHM Semiconductor

Category:

MOSFETs

Case Package:

TO-268-3

Description:

Trans MOSFET N-CH SiC 1.7kV 5.9A 3Pin(2+Tab) TO-268L T/R

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Documentation:

SCT2750NYTB Datasheet (16 Pages)

SCT2750NYTB Datasheet PDF (16 Pages)

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SCT2750NYTB Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-268-3

Number of Positions

2 Position

Drain to Source Resistance (on) (Rds)

0.75 Ω

Power Dissipation

57 W

Threshold Voltage

2.8 V

Drain to Source Voltage (Vds)

1700 V

Rise Time

24 ns

Input Capacitance (Ciss)

275pF @800V(Vds)

Fall Time

63 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

57W (Tc)

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SCT2750NYTB Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

175℃ (TJ)

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SCT2750NYTB Environmental

SCT2750NYTB Function Overview

SCT2750NYTB Documents

SCT2750NYTB Datasheet

ROHM Semiconductor

16 Pages / 0.89 MByte

SCT2750NYTB Other Datasheet PDF

ROHM Semiconductor

15 Pages / 1.13 MByte

SCT2750 Documents

SCT2750NYTB Datasheet PDF

ROHM Semiconductor

Trans MOSFET N-CH SiC 1.7kV 5.9A 3Pin(2+Tab) TO-268L T/R

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