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Part Datasheet Search > IGBTs > Infineon > SGB02N60ATMA1 Datasheet PDF
SGB02N60ATMA1
$ 0.723
SGB02N60ATMA1 Datasheet PDF (3 Pages)
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SGB02N60ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
30000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
30 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
30000 mW

SGB02N60ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SGB02N60ATMA1 Documents

Infineon
3 Pages / 0.36 MByte
Infineon
11 Pages / 0.77 MByte

SGB02N60 Documents

Infineon
Trans IGBT Chip N-CH 600V 6A 3Pin(2+Tab) TO-263
Siemens Semiconductor
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Infineon
Trans IGBT Chip N-CH 600V 6A 3Pin(2+Tab) TO-263
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