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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI1013R-T1-GE3 Datasheet PDF
SI1013R-T1-GE3
Part 3D Model
$ 0.247
SI1013R-T1-GE3 Datasheet PDF (2 Pages)
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SI1013R-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-75-3
Drain to Source Resistance (on) (Rds)
2.7 Ω
Polarity
P-Channel
Power Dissipation
150 mW
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
-400 mA
Rise Time
9 ns
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150mW (Ta)

SI1013R-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
1.68 mm
Operating Temperature
-55℃ ~ 150℃

SI1013R-T1-GE3 Documents

Vishay Siliconix
2 Pages / 0.04 MByte
Vishay Siliconix
10 Pages / 0.21 MByte

SI1013RT1 Documents

VISHAY
SC-75A P-CH 20V 0.35A
VISHAY
SC-75-3P-CH 20V 350mA 1.2Ω
Vishay Siliconix
MOSFET; Power; P-Ch; VDSS -20V; RDS(ON) 0.8Ω; ID -350mA; SC-75A (SOT-416); PD 150mW
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.8Ω; ID -350mA; SC-75A (SOT-416); PD 150mW
Vishay Siliconix
MOSFET P-CH 20V 350mA SC-75A
Vishay Semiconductor
Trans MOSFET P-CH 20V 0.35A 3Pin SC-75A T/R
VISHAY
Trans MOSFET P-CH 20V 0.35A 3Pin SC-75A T/R
Vishay Intertechnology
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