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SI1013R-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOT-416

Description:

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.8Ω; ID -350mA; SC-75A (SOT-416); PD 150mW

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SI1013R-T1-GE3 Datasheet (8 Pages)SI1013R-T1-GE3 Application Note (1 Pages)

SI1013R-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-416

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.8 Ω

Polarity

P-Channel

Power Dissipation

150 mW

Threshold Voltage

800 mV

Drain to Source Voltage (Vds)

-20.0 V

Continuous Drain Current (Ids)

-400 mA

Rise Time

9 ns

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

View Datasheet >

SI1013R-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Unknown

Size-Length

1.68 mm

Size-Height

0.8 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI1013R-T1-GE3 Environmental

SI1013R-T1-GE3 Function Overview

SI1013R-T1-GE3 Documents

SI1013R-T1-GE3 Datasheet

Vishay Semiconductor

8 Pages / 0.15 MByte

SI1013R-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

8 Pages / 0.14 MByte

SI1013R-T1-GE3 Drawing Diagrams

Vishay Semiconductor

1 Pages / 0.01 MByte

SI1013R-T1-GE3 Application Note

Vishay Semiconductor

1 Pages / 0.05 MByte

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SI1013R-T1-GE3 Datasheet PDF

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