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SI1013X-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SC-89

Description:

Trans MOSFET P-CH 20V 0.35A 3Pin SC-89 T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SI1013X-T1-GE3 Datasheet (8 Pages)SI1013X-T1-GE3 Application Note (1 Pages)

SI1013X-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

SC-89

Drain to Source Resistance (on) (Rds)

2.7 Ω

Polarity

P-Channel

Power Dissipation

250 mW

Drain to Source Voltage (Vds)

-20.0 V

Continuous Drain Current (Ids)

-400 mA

Rise Time

9 ns

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

250 mW

View Datasheet >

SI1013X-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Height

0.8 mm

Operating Temperature

-55℃ ~ 150℃

View Datasheet >

SI1013X-T1-GE3 Environmental

SI1013X-T1-GE3 Documents

SI1013X-T1-GE3 Datasheet

Vishay Semiconductor

8 Pages / 0.15 MByte

SI1013X-T1-GE3 Other Datasheet PDF

Vishay Semiconductor

8 Pages / 0.14 MByte

SI1013X-T1-GE3 Drawing Diagrams

Vishay Semiconductor

1 Pages / 0.01 MByte

SI1013X-T1-GE3 Application Note

Vishay Semiconductor

1 Pages / 0.05 MByte

SI1013XT1 Documents

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TRANSISTOR 350mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-89, 3Pin, FET General Purpose Small Signal

SI1013X-T1-GE3 Datasheet PDF

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