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SI1013X-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SC-89-3

Description:

SC-89-3P-CH 20V 350mA 1.2Ω

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3D Model

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Documentation:

SI1013X-T1-GE3 Datasheet (8 Pages)

SI1013X-T1-GE3 Datasheet PDF (8 Pages)

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SI1013X-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SC-89-3

Drain to Source Resistance (on) (Rds)

2.7 Ω

Polarity

P-CH

Power Dissipation

0.275 W

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

350mA

Rise Time

9 ns

Input Power (Max)

250 mW

Fall Time

11 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

275 mW

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SI1013X-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI1013X-T1-GE3 Environmental

SI1013X-T1-GE3 Function Overview

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SI1013X-T1-GE3 Datasheet

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8 Pages / 0.14 MByte

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