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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI1032R-T1-GE3 Datasheet PDF
SI1032R-T1-GE3
Part 3D Model
$ 0.258
SI1032R-T1-GE3 Datasheet PDF (2 Pages)
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SI1032R-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SC-75-3
Drain to Source Resistance (on) (Rds)
10 Ω
Power Dissipation
0.25 W
Drain to Source Voltage (Vds)
20 V
Breakdown Voltage (Drain to Source)
20 V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
250mW (Ta)

SI1032R-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Size-Length
1.68 mm
Size-Width
0.86 mm
Size-Height
0.8 mm
Operating Temperature
-55℃ ~ 150℃

SI1032R-T1-GE3 Documents

Vishay Siliconix
2 Pages / 0.07 MByte
Vishay Siliconix
9 Pages / 0.19 MByte

SI1032RT1 Documents

VISHAY
SC-75-3 N-CH 20V 140mA 5Ω
Vishay Siliconix
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 5Ω; ID 140mA; SC-75A (SOT-416); PD 0.25W(1/4W)
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 5Ω; ID 140mA; SC-75A (SOT-416); PD 0.25W(1/4W)
Vishay Semiconductor
Trans MOSFET N-CH 20V 0.14A 3Pin SC-75A T/R
Vishay Siliconix
MOSFET N-CH 20V 140mA SC-75A
VISHAY
MOSFET N-CH 20V 140mA SC-75A
Vishay Intertechnology
Vishay Intertechnology
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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