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SI1032X-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SC-89-3

Description:

SC-89-3 N-CH 20V 200mA 5Ω

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3D Model

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Documentation:

SI1032X-T1-GE3 Datasheet (7 Pages)

SI1032X-T1-GE3 Datasheet PDF (7 Pages)

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SI1032X-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SC-89-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

5 Ω

Polarity

N-CH

Power Dissipation

0.3 W

Threshold Voltage

700 mV

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

200mA

Input Power (Max)

300 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

300 mW

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SI1032X-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

1.7 mm

Size-Width

0.95 mm

Size-Height

0.8 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI1032X-T1-GE3 Environmental

SI1032X-T1-GE3 Function Overview

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SI1032X-T1-GE3 Datasheet

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