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SI2301BDS-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3P-CH 20V 2.2A 100mΩ

Pictures:

3D Model

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Documentation:

SI2301BDS-T1-GE3 Datasheet (8 Pages)

Package Outline Dimension on6 Page

Part Numbering System on1 Page

SI2301BDS-T1-GE3 Datasheet PDF (8 Pages)

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SI2301BDS-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

80 mΩ

Polarity

P-CH

Power Dissipation

0.9 W

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

2.2A

Rise Time

40 ns

Input Capacitance (Ciss)

375pF @6V(Vds)

Input Power (Max)

700 mW

Fall Time

20 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

900 mW

View Datasheet >

SI2301BDS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Material

Silicon

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI2301BDS-T1-GE3 Environmental

SI2301BDS-T1-GE3 Function Overview

SI2301BDS-T1-GE3 Documents

SI2301BDS-T1-GE3 Datasheet

VISHAY

8 Pages / 0.17 MByte

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9 Pages / 0.2 MByte

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SI2301BDS-T1-E3 Datasheet PDF

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SOT-23-3P-CH 20V 2.2A 100mΩ

SI2301BDS-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

SI2301BDS-T1-GE3 Datasheet PDF

VISHAY

SOT-23-3P-CH 20V 2.2A 100mΩ

SI2301BDS-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET; P-Ch; VDSS -20V; RDS(ON) 0.08Ω; ID -2.2A; TO-236 (SOT-23); PD 0.7W; VGS +/-8V

SI2301BDS-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 20V 2.2A 3Pin SOT-23 T/R

SI2301BDS-T1-GE3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 20V 2.2A 3Pin TO-236 T/R

SI2301BDS-T1-E3 Datasheet PDF

Vishay Intertechnology

SI2301BDS-T1-GE3 Datasheet PDF

Vishay Intertechnology

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