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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI2303BDS-T1 Datasheet PDF
SI2303BDS-T1
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SI2303BDS-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Power Dissipation
700mW (Ta)
Drain to Source Voltage (Vds)
30 V
Input Capacitance (Ciss)
180pF @15V(Vds)
Power Dissipation (Max)
700mW (Ta)

SI2303BDS-T1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.6 mm
Size-Height
1.45 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI2303BDS-T1 Documents

Vishay Siliconix
6 Pages / 0.09 MByte
Vishay Siliconix
6 Pages / 0.1 MByte

SI2303 Documents

Micro Commercial Components
Medium Power MOSFETS
VISHAY
SOT-23-3P-CH 30V 1.9A 190mΩ
Micro Commercial Components
SOT-23P-CH 30V 3A
Vishay Siliconix
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
Vishay Semiconductor
Trans MOSFET P-CH 30V 1.9A 3Pin SOT-23 T/R
VISHAY
SOT-23P-CH 30V 1.3A
Vishay Semiconductor
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.15Ω; ID -1.49A; TO-236 (SOT-23); PD 0.7W; VGS +/-2
Vishay Siliconix
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.15Ω; ID -1.49A; TO-236 (SOT-23); PD 0.7W; VGS +/-2
VISHAY
SOT-23-3P-CH 30V 1.9A 190mΩ
Vishay Siliconix
TRANSISTOR 1900mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
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