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SI2304BDS-T1-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:

Vishay Siliconix

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

Trans MOSFET N-CH 30V 2.6A 3Pin SOT-23 T/R

Pictures:

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Documentation:

SI2304BDS-T1-GE3 Datasheet (8 Pages)

Package Outline Dimension on5 Page 6 Page

Part Numbering System on1 Page

SI2304BDS-T1-GE3 Datasheet PDF (8 Pages)

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SI2304BDS-T1-GE3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Drain to Source Resistance (on) (Rds)

105 mΩ

Polarity

N-Channel

Power Dissipation

750mW (Ta)

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

30 V

Continuous Drain Current (Ids)

3.20 A

Input Capacitance (Ciss)

225pF @15V(Vds)

Power Dissipation (Max)

750mW (Ta)

View Datasheet >

SI2304BDS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

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SI2304BDS-T1-GE3 Environmental

SI2304BDS-T1-GE3 Function Overview

SI2304BDS-T1-GE3 Documents

SI2304BDS-T1-GE3 Datasheet

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8 Pages / 0.18 MByte

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TRANSISTOR 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AA, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal

SI2304BDS-T1-E3 Datasheet PDF

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SI2304BDS-T1-GE3 Datasheet PDF

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SI2304BDS-T1-GE3 Datasheet PDF

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