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SI2307BDS-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

SOT-23

Description:

MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ω; ID -2.5A; TO-236 (SOT-23); PD 0.75W

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Documentation:

SI2307BDS-T1-E3 Datasheet (2 Pages)

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SI2307BDS-T1-E3 Datasheet PDF (2 Pages)

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SI2307BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.063 Ω

Polarity

P-Channel

Power Dissipation

750 mW

Drain to Source Voltage (Vds)

-30.0 V

Breakdown Voltage (Gate to Source)

±20.0 V

Continuous Drain Current (Ids)

-3.20 A, -2.50 A

Input Capacitance (Ciss)

380pF @15V(Vds)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

750 mW

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SI2307BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

3.04 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃

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SI2307BDS-T1-E3 Environmental

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