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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI2307BDS-T1-GE3 Datasheet PDF
SI2307BDS-T1-GE3
$ 0.222
SI2307BDS-T1-GE3 Datasheet PDF (9 Pages)
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SI2307BDS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Power Rating
750 mW
Polarity
P-Channel
Power Dissipation
750 mW
Continuous Drain Current (Ids)
3.20 A
Rise Time
12.0 ns
Input Capacitance (Ciss)
380pF @15V(Vds)
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
750 mW

SI2307BDS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Height
1.02 mm

SI2307BDS-T1-GE3 Documents

Vishay Semiconductor
9 Pages / 0.18 MByte
Vishay Semiconductor
9 Pages / 0.18 MByte

SI2307BDST1 Documents

VISHAY
SOT-23-3P-CH 30V 2.5A 78mΩ
VISHAY
SOT-23-3P-CH 30V 2.5A 78mΩ
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ω; ID -2.5A; TO-236 (SOT-23); PD 0.75W
Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ω; ID -2.5A; TO-236 (SOT-23); PD 0.75W
Vishay Siliconix
Trans MOSFET P-CH 30V 2.5A 3Pin TO-236 T/R
Vishay Semiconductor
Trans MOSFET P-CH 30V 2.5A 3Pin SOT-23 T/R
Vishay Intertechnology
Vishay Intertechnology
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