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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI2309DS-T1-E3 Datasheet PDF
SI2309DS-T1-E3
$ 0.593
SI2309DS-T1-E3 Datasheet PDF (2 Pages)
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SI2309DS-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
SOT-23-3
Drain to Source Resistance (on) (Rds)
0.275 Ω
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
60 V
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
1.25W (Ta)

SI2309DS-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI2309DS-T1-E3 Documents

Vishay Siliconix
2 Pages / 0.05 MByte
Vishay Siliconix
5 Pages / 0.08 MByte

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MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ω; ID -1.25A; TO-236 (SOT-23); PD 1.25W
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Trans MOSFET P-CH 60V 1.25A 3Pin SOT-23 T/R
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