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SI2312BDS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3 N-CH 20V 3.9A 31mΩ

Pictures:

3D Model

Symbol

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Documentation:

SI2312BDS-T1-E3 Datasheet (7 Pages)

Package Outline Dimension on5 Page

Part Numbering System on1 Page

SI2312BDS-T1-E3 Datasheet PDF (7 Pages)

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SI2312BDS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.025 Ω

Polarity

N-Channel

Power Dissipation

750 mW

Threshold Voltage

850 mV

Drain to Source Voltage (Vds)

20 V

Continuous Drain Current (Ids)

5.00 A

Rise Time

30 ns

Input Power (Max)

750 mW

Fall Time

10 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1250 mW

View Datasheet >

SI2312BDS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

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SI2312BDS-T1-E3 Environmental

SI2312BDS-T1-E3 Function Overview

SI2312BDS-T1-E3 Documents

SI2312BDS-T1-E3 Datasheet

VISHAY

7 Pages / 0.17 MByte

SI2312BDS-T1-E3 Other Datasheet PDF

VISHAY

11 Pages / 0.24 MByte

SI2312BDS-T1-E3 Notice File

VISHAY

2 Pages / 0.09 MByte

SI2312BDS-T1-E3 Product Catalog

VISHAY

4 Pages / 0.05 MByte

SI2312BDST1 Documents

SI2312BDS-T1-E3 Datasheet PDF

VISHAY

SOT-23-3 N-CH 20V 3.9A 31mΩ

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SOT-23-3 N-CH 20V 3.9A 31mΩ

SI2312BDS-T1-E3 Datasheet PDF

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