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Part Datasheet Search > P Channel MOSFET > Vishay Semiconductor > SI2315DS-T1 Datasheet PDF
SI2315DS-T1
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SI2315DS-T1 Datasheet PDF (4 Pages)
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SI2315DS-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23
Drain to Source Resistance (on) (Rds)
50.0 mΩ
Power Dissipation
1.25 W
Drain to Source Voltage (Vds)
-12.0 V
Breakdown Voltage (Drain to Source)
-12.0 V
Continuous Drain Current (Ids)
3.20 A
Rise Time
15.0 ns

SI2315DS-T1 Documents

Vishay Semiconductor
4 Pages / 0.05 MByte

SI2315 Documents

VISHAY
SOT-23-3P-CH 12V 3A 100mΩ
Vishay Siliconix
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
Vishay Semiconductor
MOSFET, Power; P-Channel; -12V; 8V; 3.5A; 1.25W; -55 to 150℃
Vishay Siliconix
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
VISHAY
SOT-23-3P-CH 12V 3A 100mΩ
VISHAY
TO-236P-CH 12V 3.5A
Vishay Semiconductor
Trans MOSFET P-CH 12V 3A 3Pin SOT-23 T/R
VISHAY
SOT-23P-CH 12V 3A
VISHAY
TO-236P-CH 12V 3.5A
Vishay Siliconix
MOSFET 1.8V 3.2A 1.25W
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