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SI2318DS-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3 N-CH 40V 3A 45mΩ

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

SI2318DS-T1-GE3 Datasheet (8 Pages)

Package Outline Dimension on5 Page 6 Page

Part Numbering System on1 Page

SI2318DS-T1-GE3 Datasheet PDF (8 Pages)

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SI2318DS-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.036 Ω

Polarity

N-CH

Power Dissipation

1.25 W

Threshold Voltage

3 V

Drain to Source Voltage (Vds)

40 V

Continuous Drain Current (Ids)

Rise Time

12 ns

Input Capacitance (Ciss)

540pF @20V(Vds)

Fall Time

15 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

750mW (Ta)

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SI2318DS-T1-GE3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Minimum Packing Quantity

3000

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SI2318DS-T1-GE3 Environmental

SI2318DS-T1-GE3 Function Overview

SI2318DS-T1-GE3 Documents

SI2318DS-T1-GE3 Datasheet

VISHAY

8 Pages / 0.18 MByte

SI2318DS-T1-GE3 Other Datasheet PDF

VISHAY

8 Pages / 0.19 MByte

SI2318DS-T1-GE3 Notice File

VISHAY

2 Pages / 0.09 MByte

SI2318DST1 Documents

SI2318DS-T1-E3 Datasheet PDF

VISHAY

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SI2318DS-T1-GE3 Datasheet PDF

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SI2318DS-T1-GE3 Datasheet PDF

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