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SI2323DS-T1-E3 Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

TO-236

Description:

MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.031Ω; ID -3.7A; TO-236 (SOT-23); PD 0.75W

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Documentation:

SI2323DS-T1-E3 Datasheet (2 Pages)

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SI2323DS-T1-E3 Datasheet PDF (2 Pages)

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SI2323DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-236

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.039 Ω

Polarity

P-Channel

Power Dissipation

1.25 W

Drain to Source Voltage (Vds)

-20.0 V

Breakdown Voltage (Drain to Source)

-20.0 V

Continuous Drain Current (Ids)

-4.70 A

Rise Time

43 ns

Input Capacitance (Ciss)

1020pF @10V(Vds)

Fall Time

48 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

0.75 W

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SI2323DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Packaging

Cut Tape (CT)

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃

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