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Part Datasheet Search > MOSFETs > VISHAY > SI2323DS-T1-GE3 Datasheet PDF
SI2323DS-T1-GE3
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SI2323DS-T1-GE3 Datasheet PDF (9 Pages)
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SI2323DS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.039 Ω
Polarity
P-Channel
Power Dissipation
1.25 W
Threshold Voltage
1 V
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
-4.70 A
Rise Time
43 ns
Input Capacitance (Ciss)
1020pF @10V(Vds)
Input Power (Max)
750 mW
Fall Time
48 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
750mW (Ta)

SI2323DS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
3000

SI2323DS-T1-GE3 Documents

VISHAY
9 Pages / 0.19 MByte
VISHAY
10 Pages / 0.19 MByte
VISHAY
2 Pages / 0.09 MByte

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