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SI2325DS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3P-CH 150V 530mA 1.2Ω

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

SI2325DS-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on6 Page

Part Numbering System on1 Page

SI2325DS-T1-E3 Datasheet PDF (8 Pages)

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SI2325DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

1.3 Ω

Polarity

P-Channel

Power Dissipation

1.25 W

Threshold Voltage

4.5 V

Drain to Source Voltage (Vds)

150 V

Continuous Drain Current (Ids)

-690 mA

Input Capacitance (Ciss)

510pF @25V(Vds)

Input Power (Max)

750 mW

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

750 mW

View Datasheet >

SI2325DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

Minimum Packing Quantity

3000

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SI2325DS-T1-E3 Environmental

SI2325DS-T1-E3 Function Overview

SI2325DS-T1-E3 Documents

SI2325DS-T1-E3 Datasheet

VISHAY

8 Pages / 0.15 MByte

SI2325DS-T1-E3 Other Datasheet PDF

VISHAY

9 Pages / 0.18 MByte

SI2325DS-T1-E3 Notice File

VISHAY

2 Pages / 0.09 MByte

SI2325DST1 Documents

SI2325DS-T1-E3 Datasheet PDF

VISHAY

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SI2325DS-T1-GE3 Datasheet PDF

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MOSFET P-CH 150V 530mA SOT-23

SI2325DS-T1-GE3 Datasheet PDF

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