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SI2333DS-T1-E3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Category:

MOSFETs

Case Package:

SOT-23-3

Description:

SOT-23-3P-CH 12V 4.1A 32mΩ

Pictures:

3D Model

Symbol

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Pinout

Product Pictures

Documentation:

SI2333DS-T1-E3 Datasheet (8 Pages)

Package Outline Dimension on6 Page

Part Numbering System on1 Page

SI2333DS-T1-E3 Datasheet PDF (8 Pages)

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SI2333DS-T1-E3 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

SOT-23-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.032 Ω

Polarity

P-Channel

Power Dissipation

1.25 W

Threshold Voltage

1 V

Drain to Source Voltage (Vds)

12 V

Continuous Drain Current (Ids)

-4.10 A

Rise Time

45 ns

Input Capacitance (Ciss)

1100pF @6V(Vds)

Input Power (Max)

750 mW

Fall Time

60 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1250 mW

View Datasheet >

SI2333DS-T1-E3 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

Size-Length

3.04 mm

Size-Width

1.4 mm

Size-Height

1.02 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

Minimum Packing Quantity

3000

View Datasheet >

SI2333DS-T1-E3 Environmental

SI2333DS-T1-E3 Function Overview

SI2333DS-T1-E3 Documents

SI2333DS-T1-E3 Datasheet

VISHAY

8 Pages / 0.15 MByte

SI2333DS-T1-E3 Other Datasheet PDF

VISHAY

10 Pages / 0.19 MByte

SI2333DS-T1-E3 Notice File

VISHAY

2 Pages / 0.09 MByte

SI2333DST1 Documents

SI2333DS-T1 Datasheet PDF

VISHAY

SOT-23P-CH 12V 4.1A

SI2333DS-T1 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R

SI2333DS-T1 Datasheet PDF

Vishay Intertechnology

Transistor

SI2333DS-T1 Datasheet PDF

Vishay Siliconix

Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN

SI2333DS-T1-E3 Datasheet PDF

VISHAY

SOT-23-3P-CH 12V 4.1A 32mΩ

SI2333DS-T1-E3 Datasheet PDF

Vishay Siliconix

MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W

SI2333DS-T1-E3 Datasheet PDF

Vishay Semiconductor

MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W

SI2333DS-T1-GE3 Datasheet PDF

VISHAY

SOT-23-3P-CH 12V 4.1A 32mΩ

SI2333DS-T1-GE3 Datasheet PDF

Vishay Siliconix

Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R

SI2333DS-T1-GE3 Datasheet PDF

Vishay Semiconductor

Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R

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