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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI2333DS-T1-GE3 Datasheet PDF
SI2333DS-T1-GE3
$ 0.367
SI2333DS-T1-GE3 Datasheet PDF (10 Pages)
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SI2333DS-T1-GE3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
SOT-23-3
Polarity
P-Channel
Power Dissipation
750mW (Ta)
Drain to Source Voltage (Vds)
12 V
Continuous Drain Current (Ids)
-4.10 A
Input Capacitance (Ciss)
1100pF @6V(Vds)
Power Dissipation (Max)
750mW (Ta)

SI2333DS-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃ (TJ)

SI2333DS-T1-GE3 Documents

Vishay Siliconix
10 Pages / 0.19 MByte
Vishay Siliconix
9 Pages / 0.18 MByte

SI2333DST1 Documents

VISHAY
SOT-23P-CH 12V 4.1A
Vishay Semiconductor
Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R
Vishay Intertechnology
Transistor
Vishay Siliconix
Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN
VISHAY
SOT-23-3P-CH 12V 4.1A 32mΩ
Vishay Siliconix
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
VISHAY
SOT-23-3P-CH 12V 4.1A 32mΩ
Vishay Siliconix
Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R
Vishay Semiconductor
Trans MOSFET P-CH 12V 4.1A 3Pin SOT-23 T/R
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