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Part Datasheet Search > MOSFETs > Vishay Semiconductor > SI3458BDV-T1-E3 Datasheet PDF
SI3458BDV-T1-E3
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SI3458BDV-T1-E3 Datasheet PDF (11 Pages)
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SI3458BDV-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
TSOP
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.082 Ω
Polarity
N-Channel
Power Dissipation
2 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
4.10 A
Input Capacitance (Ciss)
350pF @30V(Vds)
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

SI3458BDV-T1-E3 Size & Package

TYPE
DESCRIPTION
Packaging
Tape & Reel (TR)
Size-Height
1 mm
Operating Temperature
-55℃ ~ 150℃

SI3458BDV-T1-E3 Documents

Vishay Semiconductor
11 Pages / 0.2 MByte
Vishay Semiconductor
11 Pages / 0.2 MByte
Vishay Semiconductor
1 Pages / 0.22 MByte

SI3458BDVT1 Documents

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TSOP-6 N-CH 60V 3.2A 100mΩ
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TSOP-6 N-CH 60V 3.2A 100mΩ
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MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 82mohm, Id 3.2A, TSOP-6, Pd 2W
Vishay Siliconix
TRANSISTOR 3200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Vishay Semiconductor
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 82mohm, Id 3.2A, TSOP-6, Pd 2W
Vishay Semiconductor
Trans MOSFET N-CH 60V 3.2A 6Pin TSOP T/R
Vishay Intertechnology
Vishay Intertechnology
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