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Part Datasheet Search > MOSFETs > VISHAY > SI3458BDV-T1-GE3 Datasheet PDF
SI3458BDV-T1-GE3
Part 3D Model
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SI3458BDV-T1-GE3 Datasheet PDF (11 Pages)
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SI3458BDV-T1-GE3 Specifications

TYPE
DESCRIPTION
Number of Pins
6 Pin
Case/Package
TSOP-6
Number of Positions
6 Position
Drain to Source Resistance (on) (Rds)
0.082 Ω
Polarity
N-CH
Power Dissipation
2 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
60 V
Continuous Drain Current (Ids)
3.2A
Input Capacitance (Ciss)
350pF @30V(Vds)
Input Power (Max)
3.3 W
Fall Time
10 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2W (Ta), 3.3W (Tc)

SI3458BDV-T1-GE3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-55℃ ~ 150℃
Minimum Packing Quantity
3000

SI3458BDV-T1-GE3 Documents

VISHAY
11 Pages / 0.21 MByte
VISHAY
11 Pages / 0.2 MByte
VISHAY
1 Pages / 0.22 MByte

SI3458BDVT1 Documents

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TRANSISTOR 3200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
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MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 82mohm, Id 3.2A, TSOP-6, Pd 2W
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Vishay Intertechnology
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