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Part Datasheet Search > MOSFETs > Vishay Siliconix > SI3458DV-T1 Datasheet PDF
SI3458DV-T1
Part 3D Model
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SI3458DV-T1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TSOP-6
Drain to Source Resistance (on) (Rds)
100 mΩ
Polarity
N-Channel
Power Dissipation
2.00 W
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
3.20 A

SI3458DV-T1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)

SI3458DV-T1 Documents

Vishay Siliconix
9 Pages / 0.19 MByte
Vishay Siliconix
5 Pages / 0.08 MByte

SI3458 Documents

VISHAY
TSOP-6 N-CH 60V 3.2A 100mΩ
VISHAY
TSOP-6 N-CH 60V 3.2A 100mΩ
VISHAY
TSOP N-CH 60V 3.2A
Vishay Siliconix
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 82mohm, Id 3.2A, TSOP-6, Pd 2W
Vishay Siliconix
TRANSISTOR 3200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, TSOP-6, FET General Purpose Small Signal
Vishay Semiconductor
MOSFET, N-Ch, Vds 60V, Vgs +/- 20V, Rds(on) 82mohm, Id 3.2A, TSOP-6, Pd 2W
Vishay Semiconductor
Trans MOSFET N-CH 60V 3.2A 6Pin TSOP T/R
VISHAY
TSOP N-CH 60V 3.2A
Vishay Semiconductor
Trans MOSFET N-CH 60V 3.2A 6Pin TSOP T/R
Vishay Siliconix
MOSFET N-CH 60V 3.2A 6-TSOP
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