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Part Datasheet Search > MOSFETs > VISHAY > SI3460BDV-T1-E3 Datasheet PDF
SI3460BDV-T1-E3
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SI3460BDV-T1-E3 Datasheet PDF (7 Pages)
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SI3460BDV-T1-E3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
TSOP-6
Drain to Source Resistance (on) (Rds)
27 mΩ
Polarity
N-Channel
Power Dissipation
2 W
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
8.00 A
Input Capacitance (Ciss)
860pF @10V(Vds)
Input Power (Max)
3.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2000 mW

SI3460BDV-T1-E3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
3000

SI3460BDV-T1-E3 Documents

VISHAY
7 Pages / 0.1 MByte
VISHAY
11 Pages / 0.2 MByte

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