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SI3473DDV-T1-GE3 Datasheet PDF - VISHAY

Manufacturer:

VISHAY

Case Package:

TSOP

Description:

P-Channel 12 V (D-S) MOSFET

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3D Model

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Documentation:

SI3473DDV-T1-GE3 Datasheet (11 Pages)

SI3473DDV-T1-GE3 Specifications

TYPE

DESCRIPTION

Number of Pins

6 Pin

Case/Package

TSOP

Number of Positions

6 Position

Drain to Source Resistance (on) (Rds)

0.0145 Ω

Power Dissipation

3.6 W

Rise Time

28 ns

Input Capacitance (Ciss)

1975pF @6V(Vds)

Fall Time

35 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

2000 mW

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SI3473DDV-T1-GE3 Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

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SI3473DDV-T1-GE3 Environmental

SI3473DDV-T1-GE3 Documents

SI3473DDV-T1-GE3 Datasheet

VISHAY

11 Pages / 0.24 MByte

SI3473DDV-T1-GE3 Other Datasheet PDF

VISHAY

11 Pages / 0.24 MByte

SI3473DDVT1 Documents

SI3473DDV-T1-GE3 Datasheet PDF

VISHAY

P-Channel 12 V (D-S) MOSFET

SI3473DDV-T1-GE3 Datasheet PDF

Vishay Siliconix

MOSFET P-CHANNEL 12V 8A 6TSOP

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